r07ds0345ej0100 rev.1.00 page 1 of 6 apr 06, 2011 preliminary datasheet RJK0659DPA silicon n channel power mos fet power switching features ? high speed switching ? low drive current ? high density mounting ? low on-resistance r ds(on) = 6.5 m typ. (at v gs = 10 v) ? pb-free ? halogen-free outline g d sss ddd 4 123 5678 1, 2, 3 source 4 gate 5, 6, 7, 8 drain 8 7 6 5 2 1 3 4 renesas package code: pwsn0008dc-b (package name: wpak(3)) absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current i d 30 a drain peak current i d(pulse) note1 120 a body-drain diode reverse drain current i dr 30 a avalanche current i ap note 2 15 a avalanche energy e ar note 2 16.9 mj channel dissipation pch note3 55 w channel to case thermal impedance ch-c note3 2.27 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tch = 25 c, rg 50 3. tc = 25 c r07ds0345ej0100 rev.1.00 apr 06, 2011
RJK0659DPA preliminary r07ds0345ej0100 rev.1.00 page 2 of 6 apr 06, 2011 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 60 ? ? v i d = 10 ma, v gs = 0 v gate to source leak current i gss ? ? 0.1 a v gs = 20 v, v ds = 0 v zero gate voltage drain current i dss ? ? 1 a v ds = 60 v, v gs = 0 v gate to source cutoff voltage v gs(off) 2.0 ? 4.0 v v ds = 10 v, i d = 1 ma static drain to source on state resistance r ds(on) ? 6.5 8.0 m i d = 15 a, v gs = 10 v note4 forward transfer admittance |y fs | ? 47 ? s i d = 15 a, v ds = 10 v note4 input capacitance ciss ? 2400 ? pf output capacitance coss ? 550 ? pf reverse transfer capacitance crss ? 150 ? pf v ds = 10 v, v gs = 0 v, f = 1 mhz gate resistance rg ? 1.3 ? total gate charge qg ? 30.6 ? nc gate to source charge qgs ? 13 ? nc gate to drain charge qgd ? 5.1 ? nc v dd = 25 v, v gs = 10 v, i d = 30 a turn-on delay time t d(on) ? 14 ? ns rise time t r ? 12 ? ns turn-off delay time t d(off) ? 40 ? ns fall time t f ? 10 ? ns v gs = 10 v, i d = 15 a, v dd ? 30 v, r l = 2 , rg = 4.7 body?drain diode forward voltage v df ? 0.8 1.1 v i f = 30 a, v gs = 0 v note4 body?drain diode reve rse recovery time t rr ? 47 ? ns i f = 30 a, v gs = 0 v di f / dt = 100 a/ s notes: 4. pulse test
RJK0659DPA preliminary r07ds0345ej0100 rev.1.00 page 3 of 6 apr 06, 2011 main characteristics drain to source voltage v ds (v) drain current i d (a) typical output characteristics drain current i d (a) drain current i d (a) channel dissipation pch (w) case temperature tc (c) power vs. temperature derating gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (mv) drain to source saturation voltage vs. gate to source voltage gate to source voltage v gs (v) typical transfer characteristics drain to source voltage v ds (v) maximum safe operation area drain current i d (a) static drain to source on state resistance vs. drain current 50 40 30 20 10 0 246810 50 40 30 20 10 0 246 8 80 60 40 20 0 50 100 150 200 v gs = 4.4 v 10 0.1 1 1 10 100 1000 400 300 200 100 0 4 8 12 16 20 pulse test 100 v gs = 10 v 5.2 v pulse test 0.1 1 10 100 10 100 1000 1 0.01 0.1 4.8 v pulse test 4.6 v pw = 10 ms 1 ms 10 s 100 s dc operation operation in this area is limited by r ds(on) tc = 25 c 1 shot pulse 6 v 5 v 7 v, 10 v tc = 75 c 25 c ?25 c v ds = 10 v pulse test i d = 20 a 10 a 5 a
RJK0659DPA preliminary r07ds0345ej0100 rev.1.00 page 4 of 6 apr 06, 2011 case temperature tc ( c) static drain to source on state resistance vs. temperature 20 16 12 8 4 ?25 0 25 50 75 100 125 150 0 source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating 30 24 18 12 6 25 50 75 100 125 150 0 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 pulse test capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage 010 60 50 40 20 10000 1000 100 10 v gs = 0 v f = 1 mhz crss coss ciss gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics 60 80 100 40 20 0 20 16 12 8 4 816243240 0 0 i d = 30 a v dd = 50 v 25 v 10 v v dd = 50 v 25 v 10 v v gs v ds v gs = 10 v v gs = 0 v 10 v 30 pulse test i d = 15 a i ap = 15 a v dd = 20 v duty < 0.1 % rg 50
RJK0659DPA preliminary r07ds0345ej0100 rev.1.00 page 5 of 6 apr 06, 2011 d. u. t rg i ap monitor v ds monitor v dd vin 15 v 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v dss v dss ? v dd avalanche test circuit avalanche waveform vin monitor d.u.t. vin 10 v r l v ds = 30 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 90% 10% t f switching time test circuit switching time waveform rg pulse width pw (s) normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) 3 1 0.3 0.1 0.03 0.01 1 m 10 m 100 m 1 10 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot puls e 10 100 tc = 25c p dm pw t d = pw t ch ? c (t) = s (t) ? ch ? c ch ? c = 2.27c/w, tc = 25c
RJK0659DPA preliminary r07ds0345ej0100 rev.1.00 page 6 of 6 apr 06, 2011 package dimensions 4. 23 t yp 5 . 9 0 . 21 t yp 0 . 85max 6 . 1 1 . 27 t yp 0 . 7 t yp 0 . 0 4 m i n + 0 . 1 - 0 . 2 + 0 . 1 - 0 . 3 1 . 27 t yp 0 . 05max 0m i n 0 . 5 4 5 t yp stand - off 5 . 1 0 . 2 4. 90 0 . 1 0 . 5 0 . 15 3 . 6 0 . 20 . 5 0 . 15 0 .4 2 0 . 08 3 . 92 0 . 22 ? pws n 0008dc - bwpa k (3)v 0 . 075g mass [t yp .] r ene sas code j eit a package code prev i ous code (sn p l at i ng) n ot i ce :t he reverse pattern of d i e - pad support l ead descr i bed above ex i sts . un i t : mm package n ame wpa k (3) ordering information orderable part no. quantity shipping container RJK0659DPA-00-j5a 3000 pcs taping
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